Transport properties of a two-dimensional-hole gas with density varied over a very wide range
نویسندگان
چکیده
We utilize an inverted heterostructure grown on (311)A GaAs to realize a two-dimensional hole gas (2DHG) with a built-in back gate. The density of the 2DHG is easily and reproducibly varied between 5]109 and 5]1011 cm~2, thus achieving the lowest density of a 2DHG reported to date. The mobility of the 2DHG is highly anisotropic in the (311)A plane. We observe a cross-over from a metallic behavior at the higher densities to a localized behavior in the lower range. ( 1998 Elsevier Science B.V. All rights reserved.
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